BAT63-07WE6327
Infineon Technologies
Infineon Technologies
MIXER DIODE, LOW BARRIER
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
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The BAT63-07WE6327 RF Diode by Infineon Technologies is a top-tier choice in the Diodes - RF classification, offering exceptional efficiency and durability. Part of the Discrete Semiconductor Products family, this diode features fast switching speeds and minimal signal loss, perfect for high-frequency environments. Its robust design caters to industries like telecommunications, aerospace, and medical equipment. Whether used in RF amplifiers or signal modulators, the BAT63-07WE6327 delivers consistent results. Choose Infineon Technologies for reliable RF diodes that meet the highest industry standards.
Specifications
- Product Status: Active
- Diode Type: Schottky - 2 Independent
- Voltage - Peak Reverse (Max): 3V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4
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