BAT6302VH6327XTSA1
Infineon Technologies
Infineon Technologies
RF DIODE SCHOTTKY 3V 100MW SC79
$0.55
Available to order
Reference Price (USD)
3,000+
$0.12144
6,000+
$0.11408
15,000+
$0.10672
30,000+
$0.10304
Exquisite packaging
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Experience unparalleled RF performance with the BAT6302VH6327XTSA1 RF Diode from Infineon Technologies, a standout in the Discrete Semiconductor Products category. This diode is designed for low noise and high linearity, essential for sensitive RF applications. It is widely used in medical imaging, defense systems, and wireless infrastructure. The BAT6302VH6327XTSA1 reflects Infineon Technologies's expertise in delivering high-quality Diodes - RF that meet the demands of modern technology.
Specifications
- Product Status: Active
- Diode Type: Schottky - Single
- Voltage - Peak Reverse (Max): 3V
- Current - Max: 100 mA
- Capacitance @ Vr, F: 0.85pF @ 0.2V, 1MHz
- Resistance @ If, F: -
- Power Dissipation (Max): 100 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-79, SOD-523
- Supplier Device Package: PG-SC79-2
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