BAT6804E6327HTSA1
Infineon Technologies
Infineon Technologies
DIODE SCHOTTKY 8V 150MW SOT23-3
$0.54
Available to order
Reference Price (USD)
3,000+
$0.12457
6,000+
$0.11780
15,000+
$0.11103
30,000+
$0.10290
75,000+
$0.09952
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BAT6804E6327HTSA1 RF Diode by Infineon Technologies is a premium component in the Diodes - RF category, known for its high-speed performance and reliability. As part of the Discrete Semiconductor Products lineup, it is designed to handle high-frequency signals with precision. Ideal for use in wireless communication, broadcasting, and military systems, this diode ensures minimal distortion and maximum efficiency. With Infineon Technologies's BAT6804E6327HTSA1, you get a product that excels in critical RF applications, providing unmatched durability and performance.
Specifications
- Product Status: Active
- Diode Type: Schottky - 1 Pair Series Connection
- Voltage - Peak Reverse (Max): 8V
- Current - Max: 130 mA
- Capacitance @ Vr, F: 1pF @ 0V, 1MHz
- Resistance @ If, F: 10Ohm @ 5mA, 10kHz
- Power Dissipation (Max): 150 mW
- Operating Temperature: 150°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Solid State Inc.
1N3903R
onsemi
MMBD330T1G
onsemi
NSVP264SDSF3T1G
Infineon Technologies
BAR9002ELSE6327XTSA1
MACOM Technology Solutions
MADP-007438-0287BT
NXP USA Inc.
BAP64-05W,135
Skyworks Solutions Inc.
SMP1304-079LF
Infineon Technologies
BAR141E6327HTSA1
NTE Electronics, Inc
NTE174
Skyworks Solutions Inc.