BC337-25 A1G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.8A TO92
$0.05
Available to order
Reference Price (USD)
4,000+
$0.04216
Exquisite packaging
Discount
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Optimize your electronic systems with the BC337-25 A1G Bipolar Junction Transistor (BJT) from Taiwan Semiconductor Corporation. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BC337-25 A1G delivers superior performance in diverse environments. Taiwan Semiconductor Corporation's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 5V
- Power - Max: 625 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92
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