BC817-40R13
Diotec Semiconductor
Diotec Semiconductor
TRANS NPN 45V 0.8A SOT23-3
$0.03
Available to order
Reference Price (USD)
1+
$0.03220
500+
$0.031878
1000+
$0.031556
1500+
$0.031234
2000+
$0.030912
2500+
$0.03059
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BC817-40R13 Bipolar Junction Transistor (BJT) by Diotec Semiconductor is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BC817-40R13 provides consistent performance in demanding applications. Choose Diotec Semiconductor for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 800 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 310 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Diodes Incorporated
BC857CW-7-F
Rohm Semiconductor
2SD2653KT146
Nexperia USA Inc.
BC869,135
Rohm Semiconductor
2SA1514KT146S
NXP USA Inc.
BUJ106A,127
Diodes Incorporated
ZXTN04120HP5TC
Infineon Technologies
BCX5610H6327XTSA1
Microchip Technology
JANS2N2905AL
onsemi
EMF18XV6T5
NXP USA Inc.