BC847BW/MI115
NXP USA Inc.
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.02
Available to order
Reference Price (USD)
1+
$0.02000
500+
$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
Exquisite packaging
Discount
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Enhance your circuit designs with the BC847BW/MI115 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BC847BW/MI115 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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