2PB710AS,115
NXP USA Inc.
NXP USA Inc.
TRANS PNP 50V 0.5A SMT3
$0.03
Available to order
Reference Price (USD)
1+
$0.03000
500+
$0.0297
1000+
$0.0294
1500+
$0.0291
2000+
$0.0288
2500+
$0.0285
Exquisite packaging
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Enhance your circuit designs with the 2PB710AS,115 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The 2PB710AS,115 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Obsolete
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 150mA, 10V
- Power - Max: 250 mW
- Frequency - Transition: 140MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SMT3; MPAK
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