MMSTA06Q-7-F
Diodes Incorporated
Diodes Incorporated
TRANS NPN 80V 0.5A SOT323
$0.27
Available to order
Reference Price (USD)
3,000+
$0.04838
6,000+
$0.04255
15,000+
$0.03672
30,000+
$0.03478
75,000+
$0.03284
150,000+
$0.02960
Exquisite packaging
Discount
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Optimize your electronic systems with the MMSTA06Q-7-F Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the MMSTA06Q-7-F delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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