BC857CMB,315
NXP Semiconductors
NXP Semiconductors
NEXPERIA BC857CMB - SMALL SIGNAL
$0.02
Available to order
Reference Price (USD)
10,000+
$0.02890
Exquisite packaging
Discount
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The BC857CMB,315 Bipolar Junction Transistor (BJT) by NXP Semiconductors is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the BC857CMB,315 provides consistent performance in demanding applications. Choose NXP Semiconductors for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
- Power - Max: 250 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: DFN1006B-3
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