BC857QASZ
Nexperia USA Inc.
Nexperia USA Inc.
TRANS 2PNP 45V 0.1A DFN1010B-6
$0.33
Available to order
Reference Price (USD)
5,000+
$0.04793
10,000+
$0.04154
25,000+
$0.03941
50,000+
$0.03728
125,000+
$0.03515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for reliability, the BC857QASZ BJT Array from Nexperia USA Inc. delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The BC857QASZ shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6
Related Products
Harris Corporation
CA3083M96
onsemi
NSV60100DMTWTBG
Diodes Incorporated
DSS4160FDB-7
Linear Integrated Systems, Inc.
IT130A PDIP 8L
Nexperia USA Inc.
PMBTA42DS,125
Nexperia USA Inc.
PIMZ2,125
Infineon Technologies
SMBT3904SH6327XTSA1
Linear Integrated Systems, Inc.
IT130 TO-71 6L
Nexperia USA Inc.
PMP4501V,115
Microchip Technology