BC857QASZ
Nexperia USA Inc.

Nexperia USA Inc.
TRANS 2PNP 45V 0.1A DFN1010B-6
$0.33
Available to order
Reference Price (USD)
5,000+
$0.04793
10,000+
$0.04154
25,000+
$0.03941
50,000+
$0.03728
125,000+
$0.03515
Exquisite packaging
Discount
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Engineered for reliability, the BC857QASZ BJT Array from Nexperia USA Inc. delivers unmatched performance in Discrete Semiconductor Products. Its optimized gain bandwidth and low saturation voltage cater to demanding applications like sensor interfaces, relay drivers, and H-bridge circuits. The BC857QASZ shines in medical equipment and aerospace systems where precision is critical. This product s hermetically sealed packaging ensures longevity even in harsh environments, making it a trusted component for mission-critical designs.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 2mA, 5V
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: DFN1010B-6