BC858W,135
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA BC858W - SMALL SIGN
$0.02
Available to order
Reference Price (USD)
10,000+
$0.01800
Exquisite packaging
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Enhance your circuit designs with the BC858W,135 Bipolar Junction Transistor (BJT) from NXP USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BC858W,135 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NXP USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 30 V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
- Power - Max: 200 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SOT-323
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