BCP51-16E6327
Infineon Technologies
Infineon Technologies
TRANS PNP 45V 1A SOT223
$0.11
Available to order
Reference Price (USD)
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$0.11000
500+
$0.1089
1000+
$0.1078
1500+
$0.1067
2000+
$0.1056
2500+
$0.1045
Exquisite packaging
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Optimize your electronic systems with the BCP51-16E6327 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the BCP51-16E6327 delivers superior performance in diverse environments. Infineon Technologies's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223
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