PBSS5250T,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 50V 2A TO236AB
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09430
6,000+
$0.08970
15,000+
$0.08280
30,000+
$0.07820
75,000+
$0.07590
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the PBSS5250T,215 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The PBSS5250T,215 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 2A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 480 mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
Related Products
NXP USA Inc.
2PA1774RMB,315
Rohm Semiconductor
2SAR523MT2L
Diodes Incorporated
ZTX1049ASTZ
Diodes Incorporated
BSR43QTA
onsemi
MJE200G
Rohm Semiconductor
2SB1730TL
onsemi
NSS40301MZ4T1G
Toshiba Semiconductor and Storage
2SC3326-A,LF
STMicroelectronics
BUTW92
onsemi