BCP5310H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS PNP 80V 1A SOT223-4
$0.31
Available to order
Reference Price (USD)
1+
$0.30840
500+
$0.305316
1000+
$0.302232
1500+
$0.299148
2000+
$0.296064
2500+
$0.29298
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the BCP5310H6327XTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BCP5310H6327XTSA1 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Infineon Technologies to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 125MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
BC817-40W-F2-0000HF
NTE Electronics, Inc
2N4923
onsemi
BC847CWT3G
Diotec Semiconductor
BC846BW-AQ
Rohm Semiconductor
2SCR586D3TL1
onsemi
KSC1008YTA
NTE Electronics, Inc
MJE13005
Diodes Incorporated
MMBT4126-7-F
Central Semiconductor Corp
CMPT2222A TR PBFREE
Microchip Technology