BCP54H6327XTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 45V 1A SOT223-4
$0.21
Available to order
Reference Price (USD)
1+
$0.21000
500+
$0.2079
1000+
$0.2058
1500+
$0.2037
2000+
$0.2016
2500+
$0.1995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BCP54H6327XTSA1 from Infineon Technologies is a high-performance Bipolar Junction Transistor (BJT) designed for a wide range of electronic applications. This discrete semiconductor product offers excellent amplification and switching capabilities, making it ideal for both low-power and high-power circuits. With its robust construction and reliable performance, the BCP54H6327XTSA1 ensures long-term durability and efficiency. Whether you're designing audio amplifiers, power supplies, or motor control systems, this BJT transistor delivers consistent results. Explore the versatility of BCP54H6327XTSA1 and enhance your electronic projects with this top-quality component from Infineon Technologies.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 45 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 2 W
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4-10
Related Products
Microchip Technology
2N6436
Diodes Incorporated
ZXTP749FTA
NXP USA Inc.
PDTC143XQA147
Diodes Incorporated
DXTP19020DP5-13
onsemi
PZTA14
Nexperia USA Inc.
PBSS5480X,135
Diodes Incorporated
DXT5551P5-13
NTE Electronics, Inc
NTE290AMCP
STMicroelectronics
ST13007D
NXP USA Inc.