BCP56T1G
onsemi
onsemi
TRANS NPN 80V 1A SOT223
$0.38
Available to order
Reference Price (USD)
1+
$0.38000
500+
$0.3762
1000+
$0.3724
1500+
$0.3686
2000+
$0.3648
2500+
$0.361
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the BCP56T1G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the BCP56T1G delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
- Power - Max: 1.5 W
- Frequency - Transition: 130MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
Related Products
NTE Electronics, Inc
NTE244
Infineon Technologies
BCR169WE6327
NTE Electronics, Inc
NTE2525
onsemi
MPS2222G
NTE Electronics, Inc
2N4870
Central Semiconductor Corp
TIP42A PBFREE
onsemi
MJF18004G
onsemi
NSS30101LT1G
Central Semiconductor Corp
CBCP69 TR PBFREE
Diodes Incorporated