DXT13003DG-13
Diodes Incorporated
Diodes Incorporated
TRANS NPN 450V 1.3A SOT223-3
$0.18
Available to order
Reference Price (USD)
2,500+
$0.19737
5,000+
$0.18603
12,500+
$0.17469
25,000+
$0.17280
Exquisite packaging
Discount
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Experience unmatched performance with the DXT13003DG-13 Bipolar Junction Transistor (BJT) by Diodes Incorporated. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the DXT13003DG-13 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Diodes Incorporated for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.3 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
- Power - Max: 700 mW
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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