BCR192E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS PNP 200MW SOT23-3
$0.05
Available to order
Reference Price (USD)
36,000+
$0.02537
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your PCB layout with Infineon Technologies's space-saving BCR192E6327HTSA1. This pre-configured bipolar transistor eliminates external biasing components while delivering 250mW power dissipation. Applications span from smart home appliances to automotive lighting systems. Infineon Technologies combines 20+ years of semiconductor expertise with cutting-edge silicon technology in this robust solution.
Specifications
- Product Status: Not For New Designs
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
Related Products
Comchip Technology
DTA123YCA-HF
Rohm Semiconductor
DTC044EUBTL
Rohm Semiconductor
DTA113ZUAT106
Rohm Semiconductor
DTC114TU3T106
Toshiba Semiconductor and Storage
RN2101MFV,L3F(CT
onsemi
MMUN2116LT1G
Diodes Incorporated
DDTC143XE-7
Rohm Semiconductor
DTA123YETL
Diodes Incorporated
ADTA143XUAQ-13
Diodes Incorporated