BCR503E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 50V SOT23-3
$0.54
Available to order
Reference Price (USD)
3,000+
$0.07606
6,000+
$0.06687
15,000+
$0.05767
30,000+
$0.05460
75,000+
$0.05154
150,000+
$0.04643
Exquisite packaging
Discount
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Upgrade your designs with Infineon Technologies's BCR503E6327HTSA1, a pre-biased BJT transistor engineered for efficiency. This single bipolar transistor features optimized current gain and minimal leakage, perfect for low-power circuits. Its compact package suits space-constrained applications like IoT devices, automotive modules, and power management systems. Infineon Technologies delivers superior discrete semiconductor solutions meeting rigorous industry standards for durability and performance.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100 MHz
- Power - Max: 330 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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