BCR512E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS PREBIAS NPN 0.33W SOT23-3
$0.09
Available to order
Reference Price (USD)
3,000+
$0.07052
6,000+
$0.06132
15,000+
$0.05212
30,000+
$0.04906
75,000+
$0.04599
150,000+
$0.04088
Exquisite packaging
Discount
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For designers seeking plug-and-play transistor solutions, BCR512E6327HTSA1 offers unmatched convenience. Infineon Technologies's pre-biased BJT features: 1k /10k integrated resistors 100MHz transition frequency Pb-free construction Deploy in wireless charging pads, industrial automation, or security systems for reliable operation under varying load conditions.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 500 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 100 MHz
- Power - Max: 330 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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