BF1201WR,115
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
$0.18
Available to order
Reference Price (USD)
1+
$0.18000
500+
$0.1782
1000+
$0.1764
1500+
$0.1746
2000+
$0.1728
2500+
$0.171
Exquisite packaging
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Engineered for excellence, the BF1201WR,115 RF MOSFET from NXP USA Inc. is a standout in the Discrete Semiconductor Products category, specifically within Transistors - FETs, MOSFETs - RF. This transistor offers unparalleled high-frequency performance, with features such as ultra-low RDS(on), high gain bandwidth, and superior noise immunity. It's the perfect solution for RF switching and amplification in applications like microwave ovens, RFID readers, and automotive radar systems. The BF1201WR,115's robust construction ensures long-term reliability even in harsh environments. Choose NXP USA Inc.'s BF1201WR,115 for your RF projects and benefit from industry-leading technology that enhances signal clarity and power efficiency.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 29dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1dB
- Current - Test: 15 mA
- Power - Output: -
- Voltage - Rated: 10 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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