BF1201WR,135
NXP USA Inc.
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
$0.22
Available to order
Reference Price (USD)
1+
$0.22000
500+
$0.2178
1000+
$0.2156
1500+
$0.2134
2000+
$0.2112
2500+
$0.209
Exquisite packaging
Discount
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Designed for superior RF performance, the BF1201WR,135 from NXP USA Inc. is a premium MOSFET transistor in the Discrete Semiconductor Products family (Transistors - FETs, MOSFETs - RF). This component excels in high-frequency applications with its low gate resistance, high cut-off frequency, and excellent power handling capability. It's widely used in applications ranging from broadcast television to military communication systems and medical diathermy equipment. The BF1201WR,135 combines NXP USA Inc.'s advanced semiconductor technology with rigorous quality standards to deliver a transistor that outperforms in terms of efficiency, reliability, and signal fidelity. Choose the BF1201WR,135 for your RF designs that demand nothing but the best in high-frequency performance.
Specifications
- Product Status: Obsolete
- Transistor Type: N-Channel Dual Gate
- Frequency: 400MHz
- Gain: 29dB
- Voltage - Test: 5 V
- Current Rating (Amps): 30mA
- Noise Figure: 1dB
- Current - Test: 15 mA
- Power - Output: -
- Voltage - Rated: 10 V
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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