BF821,215
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PNP 300V 0.05A TO236AB
$0.39
Available to order
Reference Price (USD)
1+
$0.39000
500+
$0.3861
1000+
$0.3822
1500+
$0.3783
2000+
$0.3744
2500+
$0.3705
Exquisite packaging
Discount
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Enhance your circuit designs with the BF821,215 Bipolar Junction Transistor (BJT) from Nexperia USA Inc.. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The BF821,215 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust Nexperia USA Inc. to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 30mA
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 25mA, 20V
- Power - Max: 250 mW
- Frequency - Transition: 60MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: TO-236AB
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