BFG403W,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 4.5V 17GHZ CMPAK-4
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your RF circuits with the BFG403W,115, a high-efficiency Bipolar Junction Transistor (BJT) from NXP USA Inc.. Part of the Discrete Semiconductor Products lineup, this transistor is designed for superior RF amplification and switching. Its high gain and low noise characteristics make it perfect for communication systems, broadcast equipment, and RF modules. The BFG403W,115 offers excellent thermal stability, high power handling, and long-lasting performance. Whether for consumer electronics or industrial applications, this transistor delivers consistent results. Choose NXP USA Inc. for innovative RF BJT technology that powers modern communication.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- Frequency - Transition: 17GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 2GHz
- Gain: 20dB ~ 22dB
- Power - Max: 16mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 3mA, 2V
- Current - Collector (Ic) (Max): 3.6mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
Related Products
onsemi
BF199_J35Z
NXP USA Inc.
BFS17A,215
Infineon Technologies
BFR 380F E6327
CEL
NE67839-A
CEL
NE85634-T1-A
Microsemi Corporation
MS1649
NXP USA Inc.
MBC13900T1
CEL
2SC5338-AZ
Broadcom Limited
AT-32032-TR1
Diodes Incorporated