BFG410W,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 4.5V 22GHZ CMPAK-4
$0.09
Available to order
Reference Price (USD)
1+
$0.09000
500+
$0.0891
1000+
$0.0882
1500+
$0.0873
2000+
$0.0864
2500+
$0.0855
Exquisite packaging
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The BFG410W,115 by NXP USA Inc. is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the BFG410W,115 from NXP USA Inc., a leader in semiconductor innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4.5V
- Frequency - Transition: 22GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
- Gain: 21dB
- Power - Max: 54mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 2V
- Current - Collector (Ic) (Max): 12mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: CMPAK-4
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