55GN01CA-TB-E
onsemi
onsemi
RF TRANS NPN 10V 4.5GHZ 3CP
$0.41
Available to order
Reference Price (USD)
3,000+
$0.08463
6,000+
$0.07617
15,000+
$0.06770
30,000+
$0.06347
75,000+
$0.05642
Exquisite packaging
Discount
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The 55GN01CA-TB-E by onsemi is a state-of-the-art RF Bipolar Junction Transistor (BJT) that stands out in the Discrete Semiconductor Products category. Designed for high-frequency applications, this transistor offers exceptional linearity and low noise, making it ideal for RF amplification. Its compact design and high power handling capability ensure reliable performance in critical applications such as base stations, military communication, and medical devices. Key attributes include high gain bandwidth, excellent thermal resistance, and stable operation under varying conditions. Upgrade your RF circuits with the 55GN01CA-TB-E from onsemi, a leader in semiconductor innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 4.5GHz
- Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
- Gain: 9.5dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: 3-CP
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