NE85639-T1-R27-A
Renesas
Renesas
RF TRANS NPN 12V 9GHZ SOT143
$1.80
Available to order
Reference Price (USD)
1+
$1.80000
500+
$1.782
1000+
$1.764
1500+
$1.746
2000+
$1.728
2500+
$1.71
Exquisite packaging
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Introducing the NE85639-T1-R27-A, a high-performance RF Bipolar Junction Transistor (BJT) from Renesas, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The NE85639-T1-R27-A features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Renesas for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
- Gain: 13dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: SOT-143
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