BFG591,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 15V 7GHZ SOT223
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The BFG591,115 RF Bipolar Junction Transistor (BJT) by NXP USA Inc. is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFG591,115 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NXP USA Inc. for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
- Current - Collector (Ic) (Max): 200mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SC-73
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