BFN26E6327HTSA1
Infineon Technologies
Infineon Technologies
TRANS NPN 300V 0.2A SOT23
$0.09
Available to order
Reference Price (USD)
1+
$0.08540
500+
$0.084546
1000+
$0.083692
1500+
$0.082838
2000+
$0.081984
2500+
$0.08113
Exquisite packaging
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Discover the BFN26E6327HTSA1 Bipolar Junction Transistor (BJT) from Infineon Technologies, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the BFN26E6327HTSA1 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose Infineon Technologies for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Not For New Designs
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 360 mW
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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