BFP 405F E6327
Infineon Technologies
Infineon Technologies
RF TRANS NPN 5V 25GHZ 4TSFP
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BFP 405F E6327 RF Bipolar Junction Transistor (BJT) by Infineon Technologies is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFP 405F E6327 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose Infineon Technologies for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 5V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
- Gain: 22.5dB
- Power - Max: 55mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
- Current - Collector (Ic) (Max): 12mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: 4-TSFP
Related Products
Broadcom Limited
AT-41435G
onsemi
MCH4021-TL-H
Central Semiconductor Corp
BFW16A
Fairchild Semiconductor
KSC3123RMTF
CEL
2SC4703-AZ
onsemi
MPS5179_D26Z
Broadcom Limited
AT-41533-TR2G
NXP USA Inc.
BFU520235
Infineon Technologies
BFG135AE6327XT
Infineon Technologies