BFG135AE6327XT
Infineon Technologies
Infineon Technologies
RF TRANS NPN 15V 6GHZ SOT223-4
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Enhance your RF designs with the BFG135AE6327XT, a high-efficiency Bipolar Junction Transistor (BJT) from Infineon Technologies. As part of the Discrete Semiconductor Products family, this transistor is tailored for RF applications, providing superior amplification and signal integrity. Its high-frequency performance and low distortion make it suitable for use in TV tuners, wireless microphones, and RF identification systems. The BFG135AE6327XT features high current gain, excellent thermal characteristics, and long-term reliability. Whether for commercial or industrial use, this transistor delivers consistent results. Trust Infineon Technologies for high-quality RF BJTs that meet the toughest demands.
Specifications
- Product Status: Discontinued at Digi-Key
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 6GHz
- Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
- Gain: 9dB ~ 14dB
- Power - Max: 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 8V
- Current - Collector (Ic) (Max): 150mA
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: PG-SOT223-4
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