UPA812T-A
CEL
CEL
RF TRANS 2 NPN 10V 7GHZ SOT363
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Introducing the UPA812T-A, a high-performance RF Bipolar Junction Transistor (BJT) from CEL, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The UPA812T-A features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on CEL for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 10V
- Frequency - Transition: 7GHz
- Noise Figure (dB Typ @ f): 1.4dB @ 1GHz
- Gain: 12dB
- Power - Max: 200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 7mA, 3V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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