BFP843H6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 2.25V SOT343
$0.60
Available to order
Reference Price (USD)
3,000+
$0.17235
6,000+
$0.16123
15,000+
$0.15011
30,000+
$0.14826
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BFP843H6327XTSA1 from Infineon Technologies is a high-performance RF Bipolar Junction Transistor (BJT) designed for demanding applications in the Discrete Semiconductor Products category. This transistor excels in radio frequency (RF) amplification, offering exceptional gain and low noise characteristics. With its robust construction and reliable performance, the BFP843H6327XTSA1 is ideal for use in communication systems, RF modules, and signal processing circuits. Key features include high transition frequency, excellent thermal stability, and low distortion, making it a top choice for engineers and designers. Applications include wireless communication devices, radar systems, and RF transceivers. Trust Infineon Technologies for superior quality and innovation in RF BJT technology.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.25V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
- Gain: 13.5dB ~ 24.5dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 1.8V
- Current - Collector (Ic) (Max): 55mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-4-3
Related Products
NXP USA Inc.
BFU520YF
Infineon Technologies
BFR949L3E6327
Renesas
UPA806T-T1-A
Infineon Technologies
BF771E6765N
Infineon Technologies
BFP420H6433XTMA1
Infineon Technologies
BFR182E-6327
Renesas Electronics America Inc
2SC4703-T1-AZ
onsemi
3MN03SF-TL-E
Infineon Technologies
BFR106E6327HTSA1
Infineon Technologies