BFR193E6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 12V 8GHZ SOT23-3
$0.46
Available to order
Reference Price (USD)
3,000+
$0.09614
6,000+
$0.08736
15,000+
$0.07858
30,000+
$0.07419
75,000+
$0.06673
150,000+
$0.06453
Exquisite packaging
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Discover the BFR193E6327HTSA1, a cutting-edge RF Bipolar Junction Transistor (BJT) from Infineon Technologies, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The BFR193E6327HTSA1 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose Infineon Technologies for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
- Gain: 10dB ~ 15dB
- Power - Max: 580mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
- Current - Collector (Ic) (Max): 80mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23
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