BFU760F,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 2.8V 45GHZ 4DFP
$0.55
Available to order
Reference Price (USD)
3,000+
$0.16373
6,000+
$0.15316
15,000+
$0.14260
30,000+
$0.14084
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the BFU760F,115, a premium RF Bipolar Junction Transistor (BJT) by NXP USA Inc., part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The BFU760F,115 boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose NXP USA Inc. for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- Frequency - Transition: 45GHz
- Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
- Gain: -
- Power - Max: 220mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 155 @ 10mA, 2V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
Related Products
NXP USA Inc.
BFG410W,115
Infineon Technologies
BFR193FH6327
onsemi
NSVF6001SB6T1G
onsemi
NSVF4009SG4T1G
NTE Electronics, Inc
NTE329
Infineon Technologies
BFR360FH6765XTSA1
onsemi
MMBTH11
NTE Electronics, Inc
NTE2688
Infineon Technologies
BF776H6327XTSA1
Infineon Technologies