BFU790F,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 2.8V 25GHZ 4DFP
$0.97
Available to order
Reference Price (USD)
3,000+
$0.22720
6,000+
$0.21254
15,000+
$0.19788
30,000+
$0.19544
Exquisite packaging
Discount
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The BFU790F,115 RF Bipolar Junction Transistor (BJT) by NXP USA Inc. is a key component in the Discrete Semiconductor Products range. Optimized for RF applications, this transistor provides high gain and low noise, ensuring superior signal amplification. Its robust design and high-frequency capabilities make it ideal for use in two-way radios, RF amplifiers, and telecommunication infrastructure. With features like excellent thermal stability and low intermodulation distortion, the BFU790F,115 is a reliable choice for engineers. Applications extend to avionics, automotive radar, and IoT devices. Choose NXP USA Inc. for advanced RF BJT technology that drives innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- Frequency - Transition: 25GHz
- Noise Figure (dB Typ @ f): 0.4dB ~ 0.5dB @ 1.5GHz ~ 2.4GHz
- Gain: -
- Power - Max: 234mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 235 @ 10mA, 2V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
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