BG3130RH6327XTSA1
Infineon Technologies
Infineon Technologies
RF MOSFET N-CH DUAL 5V SOT363-6
$0.08
Available to order
Reference Price (USD)
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$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
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The BG3130RH6327XTSA1 is a high-efficiency RF MOSFET transistor by Infineon Technologies, part of the Discrete Semiconductor Products range and categorized under Transistors - FETs, MOSFETs - RF. Designed for optimal RF performance, this transistor features low intermodulation distortion, high power density, and excellent thermal conductivity. It's widely used in professional audio equipment, military jamming systems, and wireless networking devices. The BG3130RH6327XTSA1's ability to maintain stable operation at high frequencies makes it indispensable for modern RF applications. With Infineon Technologies's reputation for quality, you can trust the BG3130RH6327XTSA1 to deliver consistent, high-performance results in your most demanding RF circuits.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 N-Channel (Dual)
- Frequency: 800MHz
- Gain: 24dB
- Voltage - Test: 5 V
- Current Rating (Amps): 25mA
- Noise Figure: 1.3dB
- Current - Test: 14 mA
- Power - Output: -
- Voltage - Rated: 8 V
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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