BIDW20N60T
Bourns Inc.
Bourns Inc.
IGBT 600V 20A TRENCH TO-247N
$3.51
Available to order
Reference Price (USD)
1+
$3.51000
500+
$3.4749
1000+
$3.4398
1500+
$3.4047
2000+
$3.3696
2500+
$3.3345
Exquisite packaging
Discount
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Enhance your electronic projects with the BIDW20N60T Single IGBT transistor from Bourns Inc.. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the BIDW20N60T ensures precision and reliability. Bourns Inc.'s cutting-edge technology guarantees a component that meets the highest industry standards. Choose BIDW20N60T for efficient and durable power solutions.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 192 W
- Switching Energy: 1mJ (on), 300µJ (off)
- Input Type: Standard
- Gate Charge: 52 nC
- Td (on/off) @ 25°C: 19ns/48ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): 33.7 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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