RGT60TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 55A 194W TO-247N
$3.16
Available to order
Reference Price (USD)
1+
$2.98000
10+
$2.67800
30+
$2.53133
120+
$2.19375
270+
$2.08126
510+
$1.86751
1,020+
$1.57500
Exquisite packaging
Discount
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Enhance your electronic projects with the RGT60TS65DGC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the RGT60TS65DGC11 ensures precision and reliability. Rohm Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose RGT60TS65DGC11 for efficient and durable power solutions.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 55 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 194 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 29ns/100ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 58 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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