STGW75H65DFB2-4
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 650 V, 7
$6.72
Available to order
Reference Price (USD)
1+
$6.72000
500+
$6.6528
1000+
$6.5856
1500+
$6.5184
2000+
$6.4512
2500+
$6.384
Exquisite packaging
Discount
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The STGW75H65DFB2-4 by STMicroelectronics is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the STGW75H65DFB2-4 delivers robust performance. STMicroelectronics's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate STGW75H65DFB2-4 into your designs for optimal power control.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 115 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
- Power - Max: 357 W
- Switching Energy: 992µJ (on), 766µJ (off)
- Input Type: Standard
- Gate Charge: 207 nC
- Td (on/off) @ 25°C: 22ns/121ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-4
- Supplier Device Package: TO-247-4
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