STGYA50M120DF3
STMicroelectronics
STMicroelectronics
TRENCH GATE FIELD-STOP, 1200 V,
$10.47
Available to order
Reference Price (USD)
1+
$10.47000
500+
$10.3653
1000+
$10.2606
1500+
$10.1559
2000+
$10.0512
2500+
$9.9465
Exquisite packaging
Discount
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The STGYA50M120DF3 Single IGBT transistor by STMicroelectronics is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The STGYA50M120DF3 ensures precise power control and long-term stability. With STMicroelectronics's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate STGYA50M120DF3 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 535 W
- Switching Energy: 2mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 194 nC
- Td (on/off) @ 25°C: 38ns/258ns
- Test Condition: 600V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 325 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: MAX247™
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