RGT8NS65DGTL
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 8A 65W TO-263S
$1.50
Available to order
Reference Price (USD)
1,000+
$0.53400
2,000+
$0.49840
Exquisite packaging
Discount
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The RGT8NS65DGTL Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGT8NS65DGTL ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGT8NS65DGTL into your projects for superior results.
Specifications
- Product Status: Not For New Designs
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 8 A
- Current - Collector Pulsed (Icm): 12 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 4A
- Power - Max: 65 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 13.5 nC
- Td (on/off) @ 25°C: 17ns/69ns
- Test Condition: 400V, 4A, 50Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: LPDS
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