FGB40N6S2T
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$3.44
Available to order
Reference Price (USD)
1+
$3.44000
500+
$3.4056
1000+
$3.3712
1500+
$3.3368
2000+
$3.3024
2500+
$3.268
Exquisite packaging
Discount
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Optimize your power systems with the FGB40N6S2T Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGB40N6S2T delivers consistent and reliable operation. Trust Fairchild Semiconductor's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 75 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
- Power - Max: 290 W
- Switching Energy: 115µJ (on), 195µJ (off)
- Input Type: Standard
- Gate Charge: 35 nC
- Td (on/off) @ 25°C: 8ns/35ns
- Test Condition: 390V, 20A, 3Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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