HGT1S3N60A4DS9A
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$1.66
Available to order
Reference Price (USD)
1+
$1.66000
500+
$1.6434
1000+
$1.6268
1500+
$1.6102
2000+
$1.5936
2500+
$1.577
Exquisite packaging
Discount
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Enhance your electronic projects with the HGT1S3N60A4DS9A Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the HGT1S3N60A4DS9A ensures precision and reliability. Fairchild Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose HGT1S3N60A4DS9A for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 17 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
- Power - Max: 70 W
- Switching Energy: 37µJ (on), 25µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 6ns/73ns
- Test Condition: 390V, 3A, 50Ohm, 15V
- Reverse Recovery Time (trr): 29 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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