IXXH50N60B3
IXYS
IXYS
IGBT 600V 120A 600W TO247
$8.31
Available to order
Reference Price (USD)
30+
$8.17967
Exquisite packaging
Discount
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Discover the IXXH50N60B3 Single IGBT transistor by IXYS, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the IXXH50N60B3 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the IXXH50N60B3 for unmatched power control.
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 120 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 36A
- Power - Max: 600 W
- Switching Energy: 670µJ (on), 740µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 27ns/100ns
- Test Condition: 360V, 36A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
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