RGW00TK65GVC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$6.88
Available to order
Reference Price (USD)
1+
$5.41000
10+
$4.85500
25+
$4.59000
100+
$3.97800
450+
$3.77400
900+
$3.38640
1,350+
$2.85600
Exquisite packaging
Discount
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The RGW00TK65GVC11 Single IGBT transistor by Rohm Semiconductor is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The RGW00TK65GVC11 ensures precise power control and long-term stability. With Rohm Semiconductor's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate RGW00TK65GVC11 into your projects for superior results.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 89 W
- Switching Energy: 1.18mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 52ns/180ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3PFM, SC-93-3
- Supplier Device Package: TO-3PFM
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