HGTD7N60C3S9A
onsemi
onsemi
IGBT 600V 14A TO252AA
$1.82
Available to order
Reference Price (USD)
2,500+
$0.92922
5,000+
$0.91844
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The HGTD7N60C3S9A by onsemi is a high-efficiency Single IGBT transistor, part of the esteemed Discrete Semiconductor Products line. With low on-state voltage and high-speed switching, it is ideal for energy-saving applications. Commonly used in electric vehicles, smart grids, and industrial machinery, the HGTD7N60C3S9A delivers robust performance. onsemi's commitment to quality ensures a product that meets the rigorous demands of modern electronics. Integrate HGTD7N60C3S9A into your designs for optimal power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 14 A
- Current - Collector Pulsed (Icm): 56 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
- Power - Max: 60 W
- Switching Energy: 165µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 23 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
Related Products
Microchip Technology
APT44GA60B
Infineon Technologies
IRGSL15B60KDPBF-INF
Rohm Semiconductor
RGTH00TS65GC11
STMicroelectronics
STGWT80V60F
STMicroelectronics
STGD8NC60KDT4
Renesas Electronics America Inc
RJP30E3DPP-M0#T2
Infineon Technologies
IKW75N65EH5XKSA1
Infineon Technologies
IHW40N120R5XKSA1
Rohm Semiconductor
RGT8TM65DGC9
Infineon Technologies