RGTH00TS65GC11
Rohm Semiconductor
Rohm Semiconductor
IGBT 650V 85A 277W TO-247N
$4.75
Available to order
Reference Price (USD)
1+
$3.74000
10+
$3.35600
30+
$3.17267
120+
$2.74950
270+
$2.60852
510+
$2.34061
1,020+
$1.97400
Exquisite packaging
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The RGTH00TS65GC11 from Rohm Semiconductor is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose RGTH00TS65GC11 for superior performance in your next power electronics project.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 85 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
- Power - Max: 277 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 94 nC
- Td (on/off) @ 25°C: 39ns/143ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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