RGWX5TS65GC11
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$7.10
Available to order
Reference Price (USD)
1+
$7.10000
500+
$7.029
1000+
$6.958
1500+
$6.887
2000+
$6.816
2500+
$6.745
Exquisite packaging
Discount
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Upgrade your power management systems with the RGWX5TS65GC11 Single IGBT transistor from Rohm Semiconductor. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RGWX5TS65GC11 provides reliable and efficient operation. Rohm Semiconductor's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RGWX5TS65GC11 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 132 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
- Power - Max: 348 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 213 nC
- Td (on/off) @ 25°C: 64ns/229ns
- Test Condition: 400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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