NGB8206NTF4G
onsemi
onsemi
INSULATED GATE BIPOLAR TRANSISTO
$1.09
Available to order
Reference Price (USD)
1+
$1.09000
500+
$1.0791
1000+
$1.0682
1500+
$1.0573
2000+
$1.0464
2500+
$1.0355
Exquisite packaging
Discount
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Discover the NGB8206NTF4G Single IGBT transistor by onsemi, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the NGB8206NTF4G ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the NGB8206NTF4G for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 390 V
- Current - Collector (Ic) (Max): 20 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
- Power - Max: 150 W
- Switching Energy: -
- Input Type: Logic
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
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